■ 제품필수정보

제조사	Infineon
제조사품명	IRF9910TRPBF
간략설명	Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 20 V
패키지 = SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 18.3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.55V Minimum Gate Threshold Voltage = 1.65V Maximum Power Dissipation = 2 W Maximum Gate Source Voltage = ±20 V Width = 4mm
높이 = 1.5mm 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 packageLow RDS(ON) at 4.5V VGS Very Low Gate Charge Fully Characterized Avalanche Voltage and Current Dual N-Channel MOSFET