■ 제품필수정보

제조사	Infineon
제조사품명	IKQ40N120CT2XKSA1
간략설명	Infineon IKQ40N120CT2XKSA1, P-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 40 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 500 W
패키지 = TO-247
장착형태 = Through Hole Channel
타입 = P
핀수 = 3 Switching Speed = 20kHz Transistor Configuration = Single
크기 = 15.9 x 5.1 x 21.1mm
최대 작동 온도 = +175 °C Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode.High power density ??up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint 20% lower R th(jh) compared to TO-247 3 pin Extended collector-emitter pin creepage of 4.25 mm Extended clip creepage due to fully encapsulated front side of the package Higher system power density ??I c increase keeping the same system thermal performance Lower thermal resistance R th(jh) and improved by ??5% heat dissipation capability of TO-247PLUS vs TO-247 Higher reliability, extended lifetime of the device