■ 제품필수정보

제조사	Infineon
제조사품명	IRF1010EZSTRLP
간략설명	N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010EZSTRLP

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 84 A Maximum Drain Source Voltage = 60 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 8.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 140 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V
최대 작동 온도 = +175 °C
최소 작동 온도 = -55 °C This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of Applications.Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free