■ 제품필수정보
제조사 |
Nexperia |
제조사품명 |
PMXB43UNEZ |
간략설명 |
N-Channel MOSFET, 3.2 A, 20 V, 4-Pin DFN1010D-3 Nexperia PMXB43UNEZ |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 3.2 A Maximum Drain Source Voltage = 20 V
패키지 = DFN1010D-3
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 120 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 0.9V Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 8.33 W Transistor Configuration = Single Maximum Gate Source Voltage = 8 V Width = 1.05mm
최소 작동 온도 = -55 °C N-channel MOSFETs ??20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.20 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction Very low Drain-Source on-state resistance RDSon = 42 m??1 kV ESD protected Low-side load switch and charging switch for portable devices Power management in battery-driven portables LED driver DC-to-DC converters