■ 제품필수정보

제조사	Nexperia
제조사품명	PMV30XPEAR
간략설명	P-Channel MOSFET, 5.3 A, -20 V, 3-Pin SOT-23 Nexperia PMV30XPEAR

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 5.3 A Maximum Drain Source Voltage = -20 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 57 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = -1.25V Minimum Gate Threshold Voltage = -0.75V Maximum Power Dissipation = 5435 mW Transistor Configuration = Single Maximum Gate Source Voltage = 12 V
최대 작동 온도 = +150 °C
높이 = 1mm 20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 980 mW ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified Relay driver High-speed line driver High-side loadswitch Switching circuits