■ 제품필수정보
제조사 |
Nexperia |
제조사품명 |
NX7002BKXBZ |
간략설명 |
Dual N-Channel MOSFET, 260 mA, 60 V, 8-Pin DFN1010B-6 Nexperia NX7002BKXBZ |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 260 mA Maximum Drain Source Voltage = 60 V
패키지 = DFN1010B-6
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 5.7 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.1V Minimum Gate Threshold Voltage = 1.1V Maximum Power Dissipation = 4032 mW Maximum Gate Source Voltage = 20 V Width = 1.05mm
높이 = 0.36mm N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).60 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic-level compatible Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM Relay driver High-speed line driver Low-side loadswitch Switching circuits