■ 제품필수정보
제조사 |
Nexperia |
제조사품명 |
BUK9M35-80EX |
간략설명 |
N-Channel MOSFET, 26 A, 80 V, 4-Pin LFPAK33 Nexperia BUK9M35-80EX |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 80 V
패키지 = LFPAK33
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 88 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.45V Minimum Gate Threshold Voltage = 0.5V Maximum Power Dissipation = 62 W Transistor Configuration = Single Maximum Gate Source Voltage = 15 V Width = 2.6mm
높이 = 0.9mm N-channel 80 V, 35 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching