■ 제품필수정보

제조사	Nexperia
제조사품명	PSMN8R5-60YS,115
간략설명	N-Channel MOSFET, 76 A, 60 V, 4-Pin LFPAK, SOT-669 Nexperia PSMN8R5-60YS,115

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 76 A Maximum Drain Source Voltage = 60 V
패키지 = LFPAK, SOT-669
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 18.4 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.8V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 106 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 4.1mm
높이 = 1.05mm N-channel MOSFETs 40 V - 60 V, Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).N-channel LFPAK 60 V, 8 mΩ standard level MOSFET, Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies