■ 제품필수정보

제조사	Nexperia
제조사품명	PMPB215ENEAX
간략설명	N-Channel MOSFET, 2.8 A, 80 V, 8-Pin DFN2020 Nexperia PMPB215ENEAX

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 2.8 A Maximum Drain Source Voltage = 80 V
패키지 = DFN2020
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 445 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.7V Minimum Gate Threshold Voltage = 1.3V Maximum Power Dissipation = 15.6 W Transistor Configuration = Single Maximum Gate Source Voltage = 20 V
최대 작동 온도 = +150 °C Automotive Standard = AEC-Q101 80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified