■ 제품필수정보

제조사	Nexperia
제조사품명	PMXB65UPEZ
간략설명	P-Channel MOSFET, 3.2 A, -12 V, 4-Pin DFN1010D-3 Nexperia PMXB65UPEZ

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 3.2 A Maximum Drain Source Voltage = -12 V
패키지 = DFN1010D-3
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 880 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = -1V Minimum Gate Threshold Voltage = -0.4V Maximum Power Dissipation = 8330 mW Transistor Configuration = Single Maximum Gate Source Voltage = 8 V Width = 1.05mm
높이 = 0.36mm P-channel MOSFETs, The perfect fit for your design when N-channels simply aren??t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia??s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.12 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm Exposed drain pad for excellent thermal conduction ElectroStatic Discharge (ESD) protection 1.5 kV HBM Drain-source on-state resistance RDSon = 59 m??Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V