■ 제품필수정보

제조사	Nexperia
제조사품명	NX7002BKR
간략설명	N-Channel MOSFET, 270 mA, 60 V, 3-Pin SOT-23 Nexperia NX7002BKR

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 270 mA Maximum Drain Source Voltage = 60 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.8 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.1V Minimum Gate Threshold Voltage = 1.1V Maximum Power Dissipation = 1670 mW Transistor Configuration = Single Maximum Gate Source Voltage = 20 V Width = 1.4mm
높이 = 1mm Logic- and Standard Level MOSFETs in a variety of packages, Sample our robust and easy-to-use MOSFETs in the 40 V to 60 V range, part of our massive MOSFET device portfolio. They are perfect for space- and power-critical applications, delivering excellent switching performance and class-leading safe operating area (SOA).60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM