■ 제품필수정보

제조사	ROHM
제조사품명	SCT3060ALGC11
간략설명	SiC N-Channel MOSFET, 39 A, 650 V, 3-Pin TO-247N ROHM SCT3060ALGC11

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 39 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247N
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 79.2 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5.6V Minimum Gate Threshold Voltage = 2.7V Maximum Power Dissipation = 134 W Transistor Configuration = Single Maximum Gate Source Voltage = 22 V Width = 5mm
높이 = 21mm Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant