■ 제품필수정보

제조사	IXYS
제조사품명	IXFK66N85X
간략설명	N-Channel MOSFET, 66 A, 850 V, 3-Pin TO-264 IXYS IXFK66N85X

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 66 A Maximum Drain Source Voltage = 850 V
패키지 = TO-264
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 65 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5.5V Minimum Gate Threshold Voltage = 3.5V Maximum Power Dissipation = 1.25 kW Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V
칩당 요소 수 = 1
높이 = 26.3mm The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages