■ 제품필수정보

제조사	IXYS
제조사품명	IXFH60N65X2
간략설명	N-Channel MOSFET, 60 A, 650 V, 3-Pin TO-247 IXYS IXFH60N65X2

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 52 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3.5V Maximum Power Dissipation = 780 W Transistor Configuration = Single Maximum Gate Source Voltage = ±30 V Width = 5.21mm
높이 = 21.34mm N-channel Power MOSFET, IXYS HiPerFET??X2
시리즈. The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control. Very low RDS(on) and QG (gate charge) Fast intrinsic rectifier diode Low intrinsic gate resistance Low package inductance Industry standard packages