■ 제품필수정보

제조사	Infineon
제조사품명	BFP640ESDH6327XTSA1
간략설명	Infineon BFP640ESDH6327XTSA1 NPN Bipolar Transistor, 50 mA, 4.1 V, 4-Pin SOT-343

■ 제품사양

Transistor
타입 = NPN Maximum DC Collector Current = 50 mA Maximum Collector Emitter Voltage = 4.1 V
패키지 = SOT-343
장착형태 = Surface Mount Maximum Power Dissipation = 200 mW Transistor Configuration = Single Maximum Collector Base Voltage = 4.8 V Maximum Emitter Base Voltage = 0.5 V Maximum Operating Frequency = 45 GHz
핀수 = 4
칩당 요소 수 = 1
크기 = 2 x 1.25 x 0.9mm SiGe RF Bipolar Transistors, Infineon. A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon ??s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.