■ 제품필수정보

제조사	Infineon
제조사품명	BSS83PH6327XTSA1
간략설명	P-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 Infineon BSS83PH6327XTSA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 330 mA Maximum Drain Source Voltage = 60 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 3 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 360 mW Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 1.3mm
시리즈 = SIPMOS Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ;sup>® ;/sup> small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant