■ 제품필수정보

제조사	Vishay
제조사품명	SIHF620S-GE3
간략설명	N-Channel MOSFET, 5.2 A, 200 V, 3-Pin D2PAK Vishay SIHF620S-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5.2 A Maximum Drain Source Voltage = 200 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 800 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 50 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 9.65mm
높이 = 4.83mm N-Channel MOSFET, 200V to 250V, Vishay Semiconductor