■ 제품필수정보

제조사	Vishay
제조사품명	SIR668DP-T1-RE3
간략설명	N-Channel MOSFET, 65 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SIR668DP-T1-RE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 65 A Maximum Drain Source Voltage = 100 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 5.05 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 104 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 72 nC @ 10 V
높이 = 1.12mm N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor