■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIR692DP-T1-RE3 |
| 간략설명 |
N-Channel MOSFET, 24.2 A, 250 V, 8-Pin PowerPAK SO-8 Vishay SIR692DP-T1-RE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 24.2 A Maximum Drain Source Voltage = 250 V
패키지 = PowerPAK SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 67 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 104 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +150 °C
높이 = 1.12mm N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
