■ 제품필수정보
제조사 |
ROHM |
제조사품명 |
RQ3G100GNTB |
간략설명 |
N-Channel MOSFET, 10 A, 40 V, 8-Pin HSMT ROHM RQ3G100GNTB |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 10 A Maximum Drain Source Voltage = 40 V
패키지 = HSMT
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 18.3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 2 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 8.4 nC @ 10 V
높이 = 0.85mm N-Channel MOSFET Transistors, ROHM