■ 제품필수정보

제조사	Infineon
제조사품명	IRF6648TRPBF
간략설명	N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC Infineon IRF6648TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 86 A Maximum Drain Source Voltage = 60 V
패키지 = DirectFET ISOMETRIC
장착형태 = Surface Mount Maximum Drain Source Resistance = 7 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.9V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 89 W Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +150 °C
시리즈 = DirectFET, HEXFET DirectFET® Power MOSFET, Infineon. The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications. Industry lowest on-resistance in their respective footprints Extremely low package resistance to minimise conduction losses Highly efficient dual-sided cooling significantly improves power density, cost and reliability Low profile of only 0.7mm