■ 제품필수정보

제조사	Infineon
제조사품명	IPN50R650CEATMA1
간략설명	N-Channel MOSFET, 9 A, 550 V, 3-Pin SOT-223 Infineon IPN50R650CEATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9 A Maximum Drain Source Voltage = 550 V
패키지 = SOT-223
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 650 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 5 W Maximum Gate Source Voltage = -30 V, +30 V Width = 3.7mm
높이 = 1.7mm Infineon CoolMOS??CE Power MOSFET