■ 제품필수정보

제조사	IXYS
제조사품명	IXTH110N25T
간략설명	N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXYS IXTH110N25T

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 110 A Maximum Drain Source Voltage = 250 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 24 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 694 W Maximum Gate Source Voltage = -20 V, +20 V Width = 5.3mm
높이 = 21.46mm N-Channel Trench-Gate Power MOSFET, IXYS. Trench Gate MOSFET Technology Low on-state Resistance RDS(on) Superior avalanche ruggedness