■ 제품필수정보

제조사	Toshiba
제조사품명	TK31E60X,S1X(S
간략설명	N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30.8 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 88 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 230 W Maximum Gate Source Voltage = -30 V, +30 V Width = 4.45mm
높이 = 15.1mm MOSFET N-Channel, TK3x
시리즈, Toshiba