■ 제품필수정보

제조사	Toshiba
제조사품명	TK100E06N1,S1X(S
간략설명	N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 Toshiba TK100E06N1,S1X(S

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 263 A Maximum Drain Source Voltage = 60 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 2.3 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 255 W Maximum Gate Source Voltage = -20 V, +20 V Width = 4.45mm
높이 = 15.1mm MOSFET N-Channel, TK100
시리즈, Toshiba