■ 제품필수정보

제조사	Infineon
제조사품명	IPB600N25N3GATMA1
간략설명	N-Channel MOSFET, 25 A, 250 V, 3-Pin D2PAK Infineon IPB600N25N3GATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 25 A Maximum Drain Source Voltage = 250 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 60 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 136 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 9.45mm
높이 = 4.57mm Infineon OptiMOS?? Power MOSFETs, 100V and over