■ 제품필수정보

제조사	Infineon
제조사품명	IPB120P04P4L03ATMA1
간략설명	P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon IPB120P04P4L03ATMA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 120 A Maximum Drain Source Voltage = 40 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 5.2 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.2V Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 136 W Transistor Configuration = Single Maximum Gate Source Voltage = -16 V, +16 V Width = 9.25mm
높이 = 4.4mm Infineon OptiMOS??P P-Channel Power MOSFETs. The Infineon OptiMOS ??P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS??P-Channel
시리즈: Temperature range from -55°C to +175°C