■ 제품필수정보

제조사	ROHM
제조사품명	VT6M1T2CR
간략설명	Dual N/P-Channel MOSFET, 100 mA, 20 V, 6-Pin VMT ROHM VT6M1T2CR

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 100 mA Maximum Drain Source Voltage = 20 V
패키지 = VMT
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 18 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 0.3V Maximum Power Dissipation = 150 mW Transistor Configuration = Dual Base Maximum Gate Source Voltage = -10 V, -8 V, +10 V, +8 V Width = 1.02mm
높이 = 0.5mm Dual, N-Channel and P-Channel MOSFET, ROHM