■ 제품필수정보
제조사 |
ROHM |
제조사품명 |
UM6J1NTN |
간략설명 |
Dual P-Channel MOSFET, 200 mA, 30 V, 6-Pin SOT-363 ROHM UM6J1NTN |
■ 제품사양
Channel
타입 = P Maximum Continuous Drain Current = 200 mA Maximum Drain Source Voltage = 30 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 2.4 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 150 mW Transistor Configuration = Dual Base Maximum Gate Source Voltage = -20 V, +20 V Width = 1.35mm
높이 = 0.9mm Dual P-Channel MOSFET Transistors, ROHM