■ 제품필수정보

제조사	Vishay
제조사품명	SIHH26N60E-T1-GE3
간략설명	N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 25 A Maximum Drain Source Voltage = 600 V
패키지 = PowerPAK 8 x 8
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 135 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 202 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
최대 작동 온도 = +150 °C
시리즈 = E
시리즈 N-Channel MOSFET, E
시리즈, Low Figure-of-Merit, Vishay Semiconductor. The E
시리즈 Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS). Features. Low figure-of-merit (FOM) RDS(on) x Qg Low input capacitance (Ciss) Low on-resistance (RDS(on)) Ultra-low gate charge (Qg) Fast switching Reduced switching and conduction losses