■ 제품필수정보

제조사	Infineon
제조사품명	IRL60S216
간략설명	N-Channel MOSFET, 298 A, 60 V, 3-Pin D2PAK Infineon IRL60S216

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 298 A Maximum Drain Source Voltage = 60 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.2 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.4V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 375 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 170 nC @ 4.5 V
높이 = 4.83mm StrongIRFET??Logic-Level Power MOSFET, Infineon. An extension to the Infineon StrongIRFET family optimised for +5V logic-level gate drive. They share the same characteristics as the existing StrongIRFET family, such as low R ;sub>DS ;/sub>(on) for greater efficiency, and high current carrying capacity for improved ruggedness and operational reliability. Optimal R ;sub>DS ;/sub>(on) @ V ;sub>GS ;/sub> = +4.5V Suitable for battery-powered systems Applications: Motor drivers, synchronous rectifier systems, OR-ing ; Redundant power switches, DC-DC converters