■ 제품필수정보

제조사	Semikron
제조사품명	SEMiX603GB12E4p
간략설명	Semikron SEMiX603GB12E4p Series IGBT Module, 1.1 kA 1200 V, 11-Pin SEMiX®3p, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 1.1 kA Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V
패키지 = SEMiX®3p
장착형태 = Through Hole Channel
타입 = N
핀수 = 11 Transistor Configuration =
시리즈
크기 = 150 x 62.4 x 17mm
최소 작동 온도 = -40 °C SEMiX® Dual IGBT Modules. Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems. For suitable press-fit gate driver modules see ; 122-0385 122-0385 to ; 122-0387 122-0387. Low profile solder-free mounting package Trenchgate technology IGBTs VCE(sat) has positive temperature coefficient High short circuit current capability Press-fit pins as auxiliary contacts UL recognized