Channel 타입 = N, P Maximum Continuous Drain Current = 1 A, 840 mA Maximum Drain Source Voltage = 20 V 패키지 = SOT-363 장착형태 = Surface Mount 핀수 = 6 Maximum Drain Source Resistance = 1.5 Ω, 750 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Maximum Power Dissipation = 330 mW Transistor Configuration = Isolated Maximum Gate Source Voltage = -6 V, +6 V 최대 작동 온도 = +150 °C 높이 = 1mm Dual N/P-Channel MOSFET, Diodes Inc.