■ 제품필수정보

제조사	Onsemi
제조사품명	NTLJD3119CTBG
간략설명	Dual N/P-Channel MOSFET, 4.1 A, 4.6 A, 20 V, 6-Pin WDFN onsemi NTLJD3119CTBG

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 4.1 A, 4.6 A Maximum Drain Source Voltage = 20 V
패키지 = WDFN
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 120 mΩ, 200 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2.3 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -8 V, +8 V Width = 2mm
높이 = 0.75mm Dual N/P-Channel MOSFET, ON Semiconductor. The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel ??s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi ??s trench technology.