■ 제품필수정보
| 제조사 | JIAENSEMI |
|---|---|
| 제조사품명 | JNG25N120AI |
| 간략설명 | 210W 45A 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4.5V@0.25mA , Input Capacitance(Cies) = 1.25nF , Td(off) = 290ns , Switching Energy(Eoff) = 1.4mJ , Pulsed Current- Forward(Ifm) = 60A , Reverse Transfer Capacitance (Cres) = 150pF , Turn-On Energy (Eon) = 2.2mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Reverse Recovery Time(trr) = 190ns , Current - Collector(Ic) = 45A , Vce Saturation(VCE(sat)) = 2.6V@25A,15V , Pd - Power Dissipation = 210W , Td(on) = 22ns , IGBT
