■ 제품필수정보
| 제조사 | SCILICON |
|---|---|
| 제조사품명 | SKQ150N65EH7I |
| 간략설명 | 621W 160A 650V TO-247PLUS-3L Single IGBTs RoHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 2.9V@1.32mA , Input Capacitance(Cies) = 8.128nF , Td(off) = 341ns , Gate Charge(Qg) = 301nC@15V , Switching Energy(Eoff) = 5.4mJ , Pulsed Current- Forward(Ifm) = 600A , Reverse Transfer Capacitance (Cres) = 32.8pF , Turn-On Energy (Eon) = 5.8mJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 84ns , Current - Collector(Ic) = 160A , Vce Saturation(VCE(sat)) = 1.65V@150A,15V , Pd - Power Dissipation = 621W , Td(on) = 45ns , Output Capacitance(Coes) = 236pF
