■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SiHG32N50D-GE3 |
| 간략설명 |
N-Channel MOSFET, 30 A, 500 V, 3-Pin TO-247AC Vishay SiHG32N50D-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 30 A Maximum Drain Source Voltage = 500 V
패키지 = TO-247AC
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 150 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 390 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
최소 작동 온도 = -55 °C N-Channel MOSFET, 500V, Vishay Semiconductor
